Vishay Intertechnology, Inc. SI4465ADY-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI4465ADY-T1-GE3

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Finish
PURE MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
13.7
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
305
DS Breakdown Voltage-Min (V)
8
Turn-off Time-Max (toff) (ns)
425
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
40
Drain-source On Resistance-Max (ohm)
0.009
Screening Level / Reference Standard
IEC-61249-2-21