SI4396DY-T1-GE3
Vishay Intertechnology, Inc.
- 生命周期状态EOL
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明MOSFET N-CH 30V 16A 8SO
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyTRENCH MOSFET
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishPure Matte Tin (Sn)
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)5.4
- Drain Current-Max (ID) (A)16
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)143
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)150
- Turn-off Time-Max (toff) (ns)47
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)20
- Pulsed Drain Current-Max (IDM) (A)40
- Drain-source On Resistance-Max (ohm)0.0115
- Screening Level / Reference StandardIEC-61249-2-21
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SI4396DY-T1-GE3