SI3493BDV-T1-BE3
Vishay Intertechnology, Inc.
- 生命周期状态Active
- REACHREACH compliant
- 说明P-CHANNEL 20-V (D-S) MOSFET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMO-193AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyTRENCH MOSFET
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)2.97
- Drain Current-Max (ID) (A)8
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)141
- DS Breakdown Voltage-Min (V)20
- Feedback Cap-Max (Crss) (pF)245
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Max (toff) (ns)239
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)25
- Drain-source On Resistance-Max (ohm)0.0275
- Screening Level / Reference StandardIEC-61249-2-21
- Time@Peak Reflow Temperature-Max (s)30
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SI3493BDV-T1-BE3