Vishay Intertechnology, Inc. SI3473DV-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI3473DV-T1-GE3

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET P-CH 12V 5.9A 6TSOP
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-193AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
5.9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
12
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max (ohm)
0.023
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED