Vishay Intertechnology, Inc. SI3430DV-T1-E3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI3430DV-T1-E3

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-193AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.14
Drain Current-Max (ID) (A)
1.8
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
40
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
50
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
8
Drain-source On Resistance-Max (ohm)
0.17
Time@Peak Reflow Temperature-Max (s)
40