Vishay Intertechnology, Inc. SI2311DS-T1-E3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI2311DS-T1-E3

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Small Signal Field-Effect Transistor, 3A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-236
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
3 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
160 pF
DS Breakdown Voltage-Min
8 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.045 ohm
Time@Peak Reflow Temperature-Max (s)
10