Vishay Intertechnology, Inc. SI2308DS-T1-E3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI2308DS-T1-E3

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-236
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
35
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
15
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
50
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
10
Drain-source On Resistance-Max (ohm)
0.16
Screening Level / Reference Standard
IEC-61249-2-21
Time@Peak Reflow Temperature-Max (s)
30