Vishay Intertechnology, Inc. SI2305ADS-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI2305ADS-T1-GE3

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET P-CH 8V 5.4A SOT23-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-236
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
1.7
Drain Current-Max (ID) (A)
5.4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
73
DS Breakdown Voltage-Min (V)
8
Feedback Cap-Max (Crss) (pF)
190
Turn-off Time-Max (toff) (ns)
68
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-50
Pulsed Drain Current-Max (IDM) (A)
10
Drain-source On Resistance-Max (ohm)
0.04
Screening Level / Reference Standard
IEC-61249-2-21