VISHAY SILICONIX SI2303DS | 搜芯易Sourcengine

VISHAY SILICONIX SI2303DS

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 1.7A I(D), 30V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-236
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
1.7 A
DS Breakdown Voltage-Min
30 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.24 ohm
Pulsed Drain Current-Max (IDM)
10 A