SI1025X-T1-E3
Vishay Intertechnology, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Small Signal Field-Effect Transistor, 0.19A I(D), 60V, 2-Element, P-Channel, Silicon, Trench Mosfet FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyTRENCH MOSFET
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)0.25
- Drain Current-Max (ID) (A)0.19
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)5
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Drain-source On Resistance-Max (ohm)4
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SI1025X-T1-E3