RF MICRO DEVICES INC SHF-0189 | 搜芯易Sourcengine

RF MICRO DEVICES INC SHF-0189

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
12 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.2 A
Highest Frequency Band
C BAND
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
9 V
Operating Temperature-Max
85 Cel
Moisture Sensitivity Level
2
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
3.5 W