SENSITRON SEMICONDUCTOR SHDG22610 | 搜芯易Sourcengine

SENSITRON SEMICONDUCTOR SHDG22610

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
7.7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max (ohm)
0.58
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED