Toshiba Corporation SH100N21D | 搜芯易Sourcengine

Toshiba Corporation SH100N21D

生命周期状态
Discontinued
说明
Silicon Controlled Rectifier, 157A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers SCR

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.30.00.80
SB Code
8541.30.00.80

JESD-30 Code
O-CEDB-N2
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
END
Additional Feature
HIGH SPEED
Number of Elements
1
Holding Current-Max
200 mA
Number of Terminals
2
Trigger Device Type
SCR
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
RMS On-state Current-Max
157 A
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-40 Cel
DC Gate Trigger Current-Max
150 mA
DC Gate Trigger Voltage-Max
3 V
Repetitive Peak Reverse Voltage
1000 V
Repetitive Peak Off-state Voltage
1000 V
Circuit Commutated Turn-off Time-Nom
80 us
Repetitive Peak Off-state Leakage Current-Max
15000 uA
Critical Rate of Rise of Off-state Voltage-Min
200 V/us