SGU6N60UF
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-251
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- Fall Time-Max (tf)160 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)54 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)202 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)6 A
- Power Dissipation-Max (Abs)30 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max7.5 V
- Collector-emitter Voltage-Max600 V
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SGU6N60UF