Rochester Electronics, LLC SGU2N60UFDTU | 搜芯易Sourcengine

Rochester Electronics, LLC SGU2N60UFDTU

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-251
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
43
Turn-off Time-Nom (toff) (ns)
291
Collector Current-Max (IC) (A)
2.4
Collector-emitter Voltage-Max (V)
600