Samsung Semiconductor, Inc. SGP5N60RUF | 搜芯易Sourcengine

Samsung Semiconductor, Inc. SGP5N60RUF

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Additional Feature
HIGH SPEED SWITCHING
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
27 ns
Turn-off Time-Nom (toff)
186 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
8 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V