ONSEMI SGP23N60UF | 搜芯易Sourcengine

ONSEMI SGP23N60UF

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.6 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Fall Time-Max (tf)
250 ns
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
55 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Max (toff)
450 ns
Turn-off Time-Nom (toff)
320 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Collector Current-Max (IC)
23 A
Power Dissipation-Max (Abs)
100 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
600 V