FAIRCHILD SEMICONDUCTOR CORP SGM2N60UFTF | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP SGM2N60UFTF

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Fall Time-Max (tf)
250 ns
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
43 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
291 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
2.4 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
2.1 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
600 V