INFINEON TECHNOLOGIES AG SGI02N120 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SGI02N120

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT Transistors FAST IGBT NPT TECH 1200V 2A
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
Single
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
61
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
24
Power Dissipation-Max (W)
42
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
40
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
375
Collector Current-Max (IC) (A)
6.2
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
4.4 mm
Length
10 mm