ONSEMI SGH30N60RUFDTU | 搜芯易Sourcengine

ONSEMI SGH30N60RUFDTU

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT 600V 48A 235W TO3P
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
101 ns
Turn-off Time-Nom (toff)
341 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
48 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V