FAIRCHILD SEMICONDUCTOR CORP SGH20N120RUFD | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP SGH20N120RUFD

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Fall Time-Max (tf)
200 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
100 ns
Gate-emitter Voltage-Max
25 V
Turn-off Time-Nom (toff)
290 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
32 A
Power Dissipation-Max (Abs)
230 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
7.5 V
Collector-emitter Voltage-Max
1200 V