SGH15N60RUFD
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- Fall Time-Max (tf)140 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)54 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)260 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)24 A
- Power Dissipation-Max (Abs)160 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max8 V
- Collector-emitter Voltage-Max600 V
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SGH15N60RUFD