FAIRCHILD SEMICONDUCTOR CORP SGH10N120RUFTU | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP SGH10N120RUFTU

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Fall Time-Max (tf)
160 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
90 ns
Gate-emitter Voltage-Max
25 V
Turn-off Time-Nom (toff)
280 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
16 A
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
7.5 V
Collector-emitter Voltage-Max
1200 V