Solid State Devices, Inc. SGF30E100Z8UBTXV | 搜芯易Sourcengine

Solid State Devices, Inc. SGF30E100Z8UBTXV

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Power Field-Effect Transistor, 15A I(D), 1000V, 0.19ohm, 2-Element, N-Channel, Gallium Nitride, Junction Cascode FET, TO-254
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-XDFM-P8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
JUNCTION CASCODE
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
62
Drain Current-Max (ID) (A)
15
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
1000
Feedback Cap-Max (Crss) (pF)
5
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
58
Drain-source On Resistance-Max (ohm)
0.19
Screening Level / Reference Standard
MIL-PRF-19500