INFINEON TECHNOLOGIES AG SGD06N60XT | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SGD06N60XT

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252AA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
41
Turn-off Time-Nom (toff) (ns)
318
Collector Current-Max (IC) (A)
12
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600