INFINEON TECHNOLOGIES AG SGB15N60HS | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SGB15N60HS

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
138
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
27
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
245
Turn-off Time-Nom (toff) (ns)
252
Collector Current-Max (IC) (A)
27
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
600