INFINEON TECHNOLOGIES AG SGB10N60 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SGB10N60

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (tf)
59 ns
Number of Elements
1
Rise Time-Max (tr)
32 ns
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
50 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
329 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
21 A
Power Dissipation-Max (Abs)
104 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5 V
Collector-emitter Voltage-Max
600 V