Solid State Devices, Inc. SFT5154GDBTXV | 搜芯易Sourcengine

Solid State Devices, Inc. SFT5154GDBTXV

生命周期状态
Active
REACH
REACH compliant
说明
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Glass-Sealed, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
1.5
Case Connection
COLLECTOR
Terminal Position
SINGLE
Fall Time-Max (ns)
500
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, GLASS-SEALED
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Power Dissipation-Max (W)
10
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
500
Turn-off Time-Max (toff) (ns)
1500
Collector Current-Max (IC) (A)
10
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
80
Collector-base Capacitance-Max (pF)
250
Transition Frequency-Nom (fT) (MHz)
70
Screening Level / Reference Standard
MIL-19500