Solid State Devices, Inc. SFT5096AS.22 | 搜芯易Sourcengine

Solid State Devices, Inc. SFT5096AS.22

生命周期状态
Active
REACH
REACH compliant
说明
Power Bipolar Transistor, 1A I(C), 550V V(BR)CEO, 1-Element, PNP, Silicon
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XBCC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
0.1
Case Connection
COLLECTOR
Terminal Position
BOTTOM
Fall Time-Max (ns)
750
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
PNP
Rise Time-Max (tr) (ns)
1200
DC Current Gain-Min (hFE)
150
Power Dissipation-Max (W)
19.4
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
1700
Turn-off Time-Max (toff) (ns)
4750
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
550
Collector-base Capacitance-Max (pF)
15
Transition Frequency-Nom (fT) (MHz)
50