Toshiba Corporation SF800N23 | 搜芯易Sourcengine

Toshiba Corporation SF800N23

生命周期状态
Active-Unconfirmed
说明
Silicon Controlled Rectifier, 800A I(T), 1000V V(DRM)
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers SCR

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Holding Current-Max
300 mA
Leakage Current-Max
35 mA
Trigger Device Type
SCR
On-State Voltage-Max
2.1 V
On-state Current-Max
800 A
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-45 Cel
DC Gate Trigger Current-Max
320 mA
DC Gate Trigger Voltage-Max
4 V
Non-Repetitive Pk On-state Cur
13000 A
Repetitive Peak Off-state Voltage
1000 V
Critical Rate of Rise of Off-state Voltage-Min
100 V/us