Toshiba Corporation SF250Q21 | 搜芯易Sourcengine

Toshiba Corporation SF250Q21

生命周期状态
Active-Unconfirmed
说明
Silicon Controlled Rectifier, 250A I(T), 1200V V(DRM)
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers SCR

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Trigger Device Type
SCR
Holding Current-Max (mA)
200
Leakage Current-Max (mA)
20
On-State Voltage-Max (V)
1.8
On-state Current-Max (A)
250
DC Gate Trigger Voltage-Max (V)
3
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-45
DC Gate Trigger Current-Max (mA)
150
Non-Repetitive Pk On-state Cur (A)
5000
Repetitive Peak Off-state Voltage (V)
1200
Critical Rate of Rise of Off-state Voltage-Min (V/us)
200