SEMIKRON INTERNATIONAL SEMIX205GD12E4 | 搜芯易Sourcengine

SEMIKRON INTERNATIONAL SEMIX205GD12E4

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 313A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X20
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.05
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
20
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
188
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
539
Collector Current-Max (IC) (A)
313
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.3
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
IEC-60747-1; UL RECOGNIZED