SDINDDH6-256G-ZA2
SANDISK CORP.
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明UFS 2.1 with Gear3/2 lane interface -40C to 105C/ / / / /AEC-Q104 Automotive AEC-Q100/AEC-Q104
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- TechnologyCMOS
- Memory Width8
- Package ShapeRECTANGULAR
- Memory IC TypeFLASH MODULE
- Parallel/SerialSERIAL
- Memory Organization256GX8
- Number of Functions1
- Number of Words Code256G
- Memory Density (bits)2199023255552
- Supply Voltage-Nom (V)3.3
- Number of Words (words)274877906944
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
- Screening Level / Reference StandardAEC-Q100
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