SOLITRON DEVICES INC SDF1NA60JDASGD1B | 搜芯易Sourcengine

SOLITRON DEVICES INC SDF1NA60JDASGD1B

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-257
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
CUSTOM BENT LEAD OPTIONS ARE AVAILABLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.5 A
Turn-on Time-Max (ton)
30 ns
Feedback Cap-Max (Crss)
50 pF
DS Breakdown Voltage-Min
600 V
Turn-off Time-Max (toff)
125 ns
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
50 W
Drain-source On Resistance-Max
6 ohm
Pulsed Drain Current-Max (IDM)
6 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED