SOLITRON DEVICES INC SDF11N90GAFXGD1N | 搜芯易Sourcengine

SOLITRON DEVICES INC SDF11N90GAFXGD1N

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 11A I(D), 900V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
11 A
Turn-on Time-Max (ton)
210 ns
DS Breakdown Voltage-Min
900 V
Turn-off Time-Max (toff)
325 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
300 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
300 W
Drain-source On Resistance-Max
0.95 ohm
Pulsed Drain Current-Max (IDM)
44 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED