SOLITRON DEVICES INC SDF10N100JEAEGD1Z | 搜芯易Sourcengine

SOLITRON DEVICES INC SDF10N100JEAEGD1Z

生命周期状态
Active
说明
Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-MSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-258AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
CUSTOM BENT LEAD OPTIONS ARE AVAILABLE
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
10
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
210
DS Breakdown Voltage-Min (V)
1000
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
325
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
300
Pulsed Drain Current-Max (IDM) (A)
40
Drain-source On Resistance-Max (ohm)
1.2
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED