SD211DE-1
VISHAY SILICONIX
- 生命周期状态Discontinued
- 说明Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBCY-W4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-206AF
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSUBSTRATE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.05 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)0.5 pF
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max125 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max70 ohm
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SD211DE-1