Microsemi Corporation SD1400-3 | 搜芯易Sourcengine

Microsemi Corporation SD1400-3

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XDFM-F6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
50
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
28
Collector-base Capacitance-Max (pF)
18