Microsemi Corporation SD1014-06 | 搜芯易Sourcengine

Microsemi Corporation SD1014-06

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PRFM-F4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
Terminal Finish
TIN LEAD
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
2.5 A
Power Dissipation-Max (Abs)
31 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
18 V
Transition Frequency-Nom (fT)
175 MHz
Collector-base Capacitance-Max
85 pF