SD1013-03E3
Microsemi Corporation
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-PRFM-F4
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)1
- Collector-emitter Voltage-Max (V)35
- Collector-base Capacitance-Max (pF)15
- Transition Frequency-Nom (fT) (MHz)150
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SD1013-03E3