XIAN UNILC SEMICONDUCTORS CO LTD SCB25D1G800AF-7AI | 搜芯易Sourcengine

XIAN UNILC SEMICONDUCTORS CO LTD SCB25D1G800AF-7AI

生命周期状态
Contact Mfr
说明
DDR1 DRAM, 128MX8, 0.75ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
DUAL BANK PAGE BURST
Length (mm)
12
JESD-30 Code
R-PBGA-B60
Memory Width
8
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
128MX8
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.75
Number of Words Code
128M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
134217728
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.012
Standby Voltage-Min (V)
2.3
Supply Current-Max (mA)
155
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA60,9X12,40/32
Clock Frequency-Max (MHz)
133
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40