Toshiba Corporation S6X06B(ANSD,Q) | 搜芯易Sourcengine

Toshiba Corporation S6X06B(ANSD,Q)

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 4500V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
O-XXDB-X4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
5000
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
1500
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
9000
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Collector-emitter Voltage-Max (V)
4500