Toshiba Corporation S6612G | 搜芯易Sourcengine

Toshiba Corporation S6612G

生命周期状态
Discontinued
说明
Silicon Controlled Rectifier, 4.7A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers SCR

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.30.00.80
SB Code
8541.30.00.80

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
ANODE
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Number of Elements
1
Holding Current-Max
60 mA
Number of Terminals
3
Trigger Device Type
SCR
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
RMS On-state Current-Max
4.7 A
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-40 Cel
DC Gate Trigger Current-Max
20 mA
DC Gate Trigger Voltage-Max
1.5 V
Repetitive Peak Reverse Voltage
400 V
Repetitive Peak Off-state Voltage
400 V
Circuit Commutated Turn-off Time-Nom
3 us
Repetitive Peak Off-state Leakage Current-Max
1500 uA
Critical Rate of Rise of Off-state Voltage-Min
400 V/us