S34MS04G200BHV000
SkyHigh Memory Limited
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 45ns 63-BGA (11x9)
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Width9 mm
- Length11 mm
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B63
- Memory Width8
- Organization512MX8
- Package CodeVFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density4294967296 bit
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Words536870912 words
- Parallel/SerialPARALLEL
- Seated Height-Max1 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Number of Functions1
- Number of Terminals63
- Programming Voltage1.8 V
- Number of Words Code512M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max105 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.95 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
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S34MS04G200BHV000