S34ML01G200GHV003
SkyHigh Memory Limited
- 生命周期状态Contact Mfr
- 说明Flash, 128MX8, 25ns
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Width6.5 mm
- Length8 mm
- Page Size2K words
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitYES
- Sector Size128K Words
- Data PollingYES
- JESD-30 CodeR-PBGA-B67
- Memory Width8
- Organization128MX8
- Package CodeVFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1073741824 bit
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max25 ns
- Number of Words134217728 words
- Parallel/SerialPARALLEL
- Seated Height-Max1 mm
- Terminal PositionBOTTOM
- Supply Current-Max30 mA
- Number of Functions1
- Programming Voltage3 V
- Standby Current-Max5.0E-5 Amp
- Number of Words Code128M
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size1024
- Data Retention Time-Min10
- Package Equivalence CodeBGA67,8X10,32
- Operating Temperature-Max105 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)2.7 V
- Supply Voltage-Nom (Vsup)3.3 V
- Write Cycle Time-Max (tWC)2.5E-5 ms
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S34ML01G200GHV003