Toshiba Corporation S2507 | 搜芯易Sourcengine

Toshiba Corporation S2507

生命周期状态
Active-Unconfirmed
说明
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, C Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
Power Gain-Min (Gp) (dB)
10
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
0.15
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.03
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
10
Power Dissipation Ambient-Max (W)
0.15
Collector-base Capacitance-Max (pF)
0.8
Transition Frequency-Nom (fT) (MHz)
6500