S1007NH
TAG SEMICONDUCTORS LTD
- 生命周期状态Contact Mfr
- 说明Silicon Controlled Rectifier, 6.4A I(T), 800V V(DRM)
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-609 Codee0
- Surface MountNO
- Terminal FinishTin/Lead (Sn/Pb)
- Holding Current-Max25 mA
- Leakage Current-Max1.5 mA
- Trigger Device TypeSCR
- On-State Voltage-Max2 V
- On-state Current-Max6.4 A
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-40 Cel
- DC Gate Trigger Current-Max10 mA
- DC Gate Trigger Voltage-Max2 V
- Non-Repetitive Pk On-state Cur120 A
- Repetitive Peak Off-state Voltage800 V
- Circuit Commutated Turn-off Time-Nom50 us
- Critical Rate of Rise of Off-state Voltage-Min100 V/us
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S1007NH