ASI Semiconductor, Inc. RZ1214B65Y | 搜芯易Sourcengine

ASI Semiconductor, Inc. RZ1214B65Y

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Power Dissipation-Max (W)
180
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
6
Operating Temperature-Max (Cel)
200