ISAHAYA ELECTRONICS CORP RT2N65M | 搜芯易Sourcengine

ISAHAYA ELECTRONICS CORP RT2N65M

生命周期状态
Contact Mfr
说明
Small Signal Bipolar Transistor, 0.4A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
R-PDSO-G5
Configuration
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR IS 10K
Number of Elements
2
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
820
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.4 A
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
20 V
Power Dissipation Ambient-Max
0.15 W
Transition Frequency-Nom (fT)
35 MHz