Mitsubishi Electric Corp. RT1P231S
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Configuration
    SINGLE WITH BUILT-IN RESISTOR
  • Additional Feature
    BUILT-IN BIAS RESISTOR
  • Number of Elements
    1
  • Qualification Status
    Not Qualified
  • Polarity/Channel Type
    PNP
  • DC Current Gain-Min (hFE)
    50
  • Operating Temperature-Max
    150 Cel
  • Collector Current-Max (IC)
    0.1 A
  • Transistor Element Material
    SILICON
  • Collector-emitter Voltage-Max
    50 V
  • Transition Frequency-Nom (fT)
    150 MHz

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RT1P231S